Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

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• 作者：Sen Liu ; Nianduan Lu ; Xiaolong Zhao ; Hui Xu ; Writam Banerjee ; Hangbing Lv ; Shibing Long ; Qingjiang Li ; Qi Liu and Ming Liu
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：December 28, 2016
• 年：2016
• 卷：28
• 期：48
• 页码：10809
• 全文大小：5120K
• ISSN：1521-4095

文摘

On page 10623, Q. Liu, M. Liu and co-workers have demonstrated that the negative-SET behavior, which can cause reset failure, is related to the conductive filament overgrowth phenomenon in cation-based resistive switching memory. In addition, they propose an effective solution (inserting an ion/atom-blocking layer, i.e. graphene) to eliminate the negative-SET phenomenon fundamentally. The fabricated graphene-based device shows good and stable resistive switching performances.