Deep reactive ion etching of PMMA

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• 作者：Zhang ; Congchun ; Yang ; Chunsheng ; Ding ; Duifu
• 关键词：81.65cf ; 82.33 ; S52.77.Bn ; Deep reactive ion etching ; PMMA ; High aspect ratio ; Microstructures
• 刊名：Applied Surface Science
• 出版年：2004
• 出版时间：April 15, 2004
• 年：2004
• 卷：227
• 期：1-4
• 页码：139-143
• 全文大小：205 K

文摘

The deep reactive ion etching of PMMA in O₂, O₂/CHF₃ discharges has been examined as a function of plasma parameters such as pressure, power and relative composition. It is demonstrated that the etching rate initially increases with pressure but decreases after 6.65Pa. The etching rate increased linearly with power, but the rough surface will occur and sample will be distorted, so power cannot surpass 50W. The etching rate decreases with CHF₃ ratio in O₂/CHF₃ discharges. The sidewall undercut becomes serious when the profile depth etched in pure O₂ plasma is more than 100μm. By addition of proper proportion of CHF₃ to O₂, the sidewall undercut can be reduced. The sidewall profile is vertical even the etching depth is as deep as 400μm when etched in O₂/CHF₃ discharges(40 % CHF₃), 30W, 3.99Pa, and high aspect ratio microstructure is achieved.