Admittance spectroscopy of GaAs/InGaP MQW structures

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• 作者：E. Gombia ; C. Ghezzi ; A. Parisini ; L. Tarricone ; M. Longo
• 关键词：Admittance measurements ; III– ; V Semiconductors ; Heterosructures ; Quantum wells ; Metal-organic chemical vapour deposition (MOCVD)
• 刊名：Materials Science and Engineering: B
• 出版年：2008
• 出版时间：15 February 2008
• 年：2008
• 卷：147
• 期：2-3
• 页码：171-174
• 全文大小：235 K

文摘

An accurate determination of the valence band discontinuity of the lattice matched GaAs/InGaP heterostructure is performed by admittance spectroscopy measurements in p⁺/MQW/n⁺ structures grown by metal-organic vapour phase epitaxy (MOVPE) using tertiarybutylarsine and tertiarybutylphosphine as alternative precursors for the V group elements. Through the analysis of the temperature dependence of the resonance frequency at which the isothermal curves of the conductance over frequency G(ω)/ω have the maximum, the energy separation of 336 ± 5 meV between the lowest heavy hole quantum level in the GaAs wells and the InGaP valence band top is obtained. A valence band discontinuity of ΔE_V = 346 ± 5 meV is then derived by accounting for the calculated confinement energy of heavy holes (). Experimental values of ΔE_V previously reported in the literature spread over the wide range of 300–400 meV.