Strained c:Si_0.55Ge_0.45 with embedded e:Si_0.75Ge_0.25 S/D IFQW SiGe-pFET for DRAM periphery applications

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• 作者：R. Ritzenthaler^a ; ^{romain.ritzenthaler@imec.be" class="auth_mail" title="E-mail the corresponding author} ; T. Schram^a ; L. Witters^a ; J. Mitard^a ; A. Spessot^b ; C. Caillat^b ; G. Hellings^a ; G. Eneman^a ; M. Aoulaiche^b ; H.-J. Na^c ; Y. Son^d ; K.B. Noh^d ; P. Fazan^b ; S.-G. Lee^c ; N. Collaert^a ; A. Mocuta^a ; N. Horiguchi^a ; A.V.-Y. Thean^a
• 关键词：DRAM periphery transistors ; High mobility channels ; MOSFET
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：42
• 期：part_P2
• 页码：255-258
• 全文大小：1113 K

文摘

In this work, we demonstrate a High-k Metal Gate (HKMG) Implant Free Quantum Well (IFQW) SiGe-pFET device used as a DRAM periphery device. Using a c:Si_0.55Ge_0.45 channel and embedded e:Si_0.75Ge_0.25 source/drain (S/D), a very significant source current of 625 μA/μm @I_OFF=100 pA/μm (at supply voltage V_DD=−1 V) is demonstrated. The current improvement compared to DRAM compatible unstrained Silicon baseline technology (featuring HKMG) is large, and IFQW transistors are also competitive with regards to Strained Si devices. In particular, IFQW have a specific potential for Sense Amplifiers, with a demonstrated very good drive current/transconductance boost in the range of targeted gate lengths and excellent matching properties.