Active pixel sensors in AMS H18/H35 HV-CMOS technology for the ATLAS HL-LHC upgrade

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• 作者：Branislav Ristic^a ; ^b ; ^{bristic@cern.ch" class="auth_mail" title="E-mail the corresponding author} ; On behalf for the ATLAS CMOS Pixel Collaboration
• 关键词：ATLAS ; HV-CMOS ; Pixel sensors ; Radiation hard detectors
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：21 September 2016
• 年：2016
• 卷：831
• 期：Complete
• 页码：88-93
• 全文大小：1562 K

文摘

Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement signal processing electronics in deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150 V leading to a depletion depth of several 10 μm.

Prototype sensors in the AMS H18 180 nm and H35 350 nm HV-CMOS processes were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiations with X-rays and protons revealed a tolerance to ionizing doses of 1 Grad while Edge-TCT studies assessed the effects of radiation on the charge collection. The sensors showed high detection efficiencies after neutron irradiation to middle" title="View the MathML source" src="/sd/grey_pxl.gif" data-inlimgeid="1-s2.0-S0168900216305423-si0008.gif">${10}^{15}{\mathrm{n}}_{\mathrm{eq}}{\mathrm{cm}}^{-2}$ in testbeam experiments.

A full reticle size demonstrator chip, implemented in the H35 process is being submitted to prove the large scale feasibility of the HV-CMOS concept.