On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method

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• 作者：Zhigang Yin ; Nuofu Chen ; Ruixuan Dai ; Lei Liu ; Xingwang Zhang ; Xiaohui Wang ; Jinliang Wu ; Chunlin Chai
• 刊名：Journal of Crystal Growth
• 出版年：2007
• 出版时间：1 July 2007
• 年：2007
• 卷：305
• 期：1
• 页码：296-301
• 全文大小：719 K

文摘

Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products.