Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation
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文摘
Low-energy, low-dose separation-by-implantation-of-oxygen silicon-on-insulator materials have been successfully fabricated with doses of 2.5×1017 and 3.5×1017 O+ cm−2 at energies of 130, 100, 70 keV, followed by a high temperature annealing. The microstructure evolution was investigated by cross-sectional transmission electron microscopy. The results show that a good dose-energy match is important for the formation of superior low-dose low-energy SIMOX materials with high integrity buried oxide layer. The effect of oxygen concentration on the improvement of the buried oxide layer quality during high temperature annealing is also discussed.