Epitaxial integration of tetragonal BiFeO₃ with silicon for nonvolatile memory applications

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• 作者：Jingbin Zhu^a ; Zhigang Yin^a ; ^b ; ^{yzhg@semi.ac.cn} ; Zhen Fu^a ; Yajuan Zhao^a ; Xingwang Zhang^a ; ^b ; Xin Liu^a ; Jingbi You^a ; ^b ; Xingxing Li^a ; Junhua Meng^a ; Heng Liu^a ; Jinliang Wu^a
• 关键词：A1. Crystal structure ; A3. Physical vapor deposition processes ; A3. Heteroepitaxy ; B1. Oxide ; B2. Ferroelectric materials ; B3. Nonvolatile memory
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：459
• 期：Complete
• 页码：178-184
• 全文大小：996 K
• 卷排序：459

文摘

Epitaxial growth of tetragonal BiFeO3 on the Bi2SiO5-buffered Si(001) substrates. A true tetragonal symmetry rather than the monoclinic MC structure was found. The Au/tetragonal BiFeO3/Bi2SiO5/Si capacitor exhibits a giant memory window.