Dopin
g TiO
2 with nitro
gen is reco
gnized as a procedure to
get sensitization of this material with visible li
ght.In the present work, incorporation of nitro
gen within the structure of TiO
2 thin films has been accomplishedby N
2+ ion implantation in TiO
2 anatase thin films (50 keV ion ener
gy for doses of 3 × 10
16, 6 × 10
16, and1.2 × 10
17 ions cm
-2) and durin
g preparation by metalor
ganic chemical vapor deposition (MOCVD) usin
gnitro
gen as carrier
gas. The analysis of the samples by X-ray photoemission spectroscopy (XPS) and for theMOCVD samples also by secondary ion mass spectroscopy (SIMS) has shown that nitro
gen, in the form ofnitride-like species, (N/Ti ratios of 0.03 and 0.12 for the MOCVD and the implanted samples, respectively)has become effectively incorporated within the structure of TiO
2. The water contact an
gle on the implantedthin films varied from about 80
ges/entities/de
g.
gif"> to around 30
ges/entities/de
g.
gif"> when illuminated with visible li
ght, dependin
g on the iondose. Similarly, the MOCVD samples showed a sharp decrease in wettin
g contact an
gle under visible li
ghtfrom about 80
ges/entities/de
g.
gif"> to 55
ges/entities/de
g.
gif">. In the two cases, the thin films reach total hydrophilicity by posterior UV irradiation.To account for these results, the possible existence of specific excitation mechanisms for visible or UV photons,the former involvin
g the incorporated nitro
gen atoms, is discussed.