Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping
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- 作者：Cheng-Kai Chang ; Satender Kataria ; Chun-Chiang Kuo ; Abhijit Ganguly ; Bo-Yao Wang ; Jeong-Yuan Hwang ; Kay-Jay Huang ; Wei-Hsun Yang ; Sheng-Bo Wang ; Cheng-Hao Chuang ; Mi Chen ; Ching-I Huang ; Way-Faung Pong ; Ker-Jar Song ; Shoou-Jinn Chang ; Jing-Hua Guo ; Yian Tai ; Masahiko Tsujimoto ; Seiji Isoda ; Chun-Wei Chen ; Li-Chyong Chen ; Kuei-Hsien Chen
- 刊名：ACS Nano
- 出版年：2013
- 出版时间：February 26, 2013
- 年：2013
- 卷：7
- 期：2
- 页码：1333-1341
- 全文大小：573K
- 年卷期：v.7,no.2(February 26, 2013)
- ISSN：1936-086X
文摘
Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV鈥搗is spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the 蟺鈥撓€* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.