Structure鈥揚roperty Correlations in a Ce-Doped (Lu,Gd)2SiO5:Ce Scintillator

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• 作者：Oleg Sidletskiy ; Andrei Belsky ; Alexander Gektin ; Svetlana Neicheva ; Daniil Kurtsev ; Valerii Kononets ; Christophe Dujardin ; Kheirreddine Lebbou ; Olga Zelenskaya ; Vladimir Tarasov ; Konstantin Belikov ; Boris Grinyov
• 刊名：Crystal Growth & Design
• 出版年：2012
• 出版时间：September 5, 2012
• 年：2012
• 卷：12
• 期：9
• 页码：4411-4416
• 全文大小：343K
• 年卷期：v.12,no.9(September 5, 2012)
• ISSN：1528-7505

文摘

A full concentration range of Lu_2xGd_2鈥?xSiO₅ (LGSO:Ce) crystals was grown by the Czochralski method. Dependence of the scintillation properties on composition (x) in the range of solid solutions is established. It was determined that the LGSO:Ce scintillation yield increases in the range 0.3 < x < 0.8 and reaches 29000 phot/MeV at 60% of Lu in the host (x = 0.6), and energy resolution improves up to 6.7% at 662 KeV. The observed light yield increase, surprisingly high Ce³⁺ segregation coefficients, improvement of energy resolution, and suppression of afterglow can be attributed to modification of both hot and thermalized diffusion of secondary electrons and holes induced by short-range separation in solid solution. The proposed approach can be valid for a wide range of mixed scintillation crystals and provides room for further improvement of their characteristics by isovalent substitution of host atoms.