Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors

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• 作者：Tianyou Zhai ; Xiaosheng Fang ; Meiyong Liao ; Xijin Xu ; Liang Li ; Baodan Liu ; Yasuo Koide ; Ying Ma ; Jiannian Yao ; Yoshio Bando ; Dmitri Golberg
• 刊名：ACS Nano
• 出版年：2010
• 出版时间：March 23, 2010
• 年：2010
• 卷：4
• 期：3
• 页码：1596-1602
• 全文大小：510K
• 年卷期：0
• ISSN：1936-086X

文摘

The synthesis of high-quality In₂Se₃ nanowire arrays via thermal evaporation method and the photoconductive characteristics of In₂Se₃ individual nanowires are first investigated. The electrical characterization of a single In₂Se₃ nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In₂Se₃ nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In₂Se₃ nanowires in next-generation sensors and detectors for commercial, military, and space applications.