Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
详细信息 查看全文
- 作者：Yong-Bing Tang ; Li-Chang Yin ; Yang Yang ; Xiang-Hui Bo ; Yu-Lin Cao ; Hong-En Wang ; Wen-Jun Zhang ; Igor Bello ; Shuit-Tong Lee ; Hui-Ming Cheng ; Chun-Sing Lee
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：March 27, 2012
- 年：2012
- 卷：6
- 期：3
- 页码：1970-1978
- 全文大小：580K
- 年卷期：v.6,no.3(March 27, 2012)
- ISSN：1936-086X
文摘
We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0鈥?3.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 102. Especially, the band gap of graphenes is tuned from 0 to 0.54 eV with increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.