ZrSe3-Type Variant of TiS3: Structure and Thermoelectric Properties

详细信息    查看全文

• 作者：Emmanuel Guilmeau ; David Berthebaud ; Patrick R. N. Misse ; Sylvie H茅bert ; Oleg I. Lebedev ; Daniel Chateigner ; Christine Martin ; Antoine Maignan
• 刊名：Chemistry of Materials
• 出版年：2014
• 出版时间：October 14, 2014
• 年：2014
• 卷：26
• 期：19
• 页码：5585-5591
• 全文大小：601K
• ISSN：1520-5002

文摘

A dense TiS₃ sample has been processed by Spark Plasma Sintering. The structural analysis, obtained by coupling powder X-ray diffraction and transmission electron microscopy (TEM), shows that the A-variant of the ZrSe₃-type structure is stabilized for the first time. Defects along the main atomic layer stacking directions are evidenced by high-resolution TEM, which explain the peculiar X-ray powder diffraction patterns, with strongly anisotropic microstrains. The presence of these structural defects might explain the existence of a metal-to-insulator transition with a charge localization below T_MI 鈮?325 K. Large absolute values of the Seebeck coefficient, in the range 鈭?00 鈮?S 鈮?鈭?00 渭V路K^鈥?, are observed for 100 鈮?T 鈮?600 K, together with a low thermal conductivity, 魏 = 2 W路K^鈥?路m^鈥? at 600 K. The T^鈥? dependence of the lattice part of 魏 indicates its phononic character. As the charge carrier concentration measured by Hall effect is too low, n = 1.24 脳 10¹⁸ cm^鈥?, extra doping would be necessary to decrease its too high electrical resistivity (蟻_300K 鈭?1.4 惟路cm) for thermoelectric applications.