Defect Formation in Ga-Catalyzed Silicon Nanowires
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- 作者：Snia Conesa-Boj ; Ilaria Zardo ; Snia Estrad ; Li Wei ; Pierre Jean Alet ; Pere Roca i Cabarrocas ; Joan R. Morante ; Francesca Peir ; Anna Fontcuberta i Morral ; Jordi Arbiol
- 刊名：Crystal Growth & Design
- 出版年：2010
- 出版时间：April 7, 2010
- 年：2010
- 卷：10
- 期：4
- 页码：1534-1543
- 全文大小：1306K
- 年卷期：v.10,no.4(April 7, 2010)
- ISSN：1528-7505
文摘
The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmission electron microscopy (HRTEM) analysis reveals the existence of various types of structural defects, which can be classified mainly according to the orientation into axial twins, lateral twins, and transverse twins. We compare our results with previous studies of Si nanowires synthesized with other catalyst metals. Understanding both the origin and the effects of the observed defects is important for technological applications. The presence of twinned domains changes locally the structure of the material. As a consequence, one should find a different local density of states and band gap, which should result in a variation of the carrier transport and optical properties of the nanowires.