Well-Aligned Single-Crystalline GaN Nanocolumns and Their Field Emission Properties

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• 作者：Zhuo Chen ; Chuanbao Cao ; Wai Sang Li ; Charles Surya
• 刊名：Crystal Growth & Design
• 出版年：2009
• 出版时间：February 4, 2009
• 年：2009
• 卷：9
• 期：2
• 页码：792-796
• 全文大小：262K
• 年卷期：v.9,no.2(February 4, 2009)
• ISSN：1528-7505

文摘

Well-aligned GaN nanocolumns on silicon substrate were fabricated by simple and low-cost chemical vapor deposition without any catalyst. The structure and morphology of the as-synthesized GaN nanocolumns were characterized by X-ray diffraction and scanning and transmission electron microscopies. The aligned GaN nanocolumn arrays exhibited excellent field emission properties with a low turn-on field of 2.6 V/μm (0.01 mA/cm²) and high stability at room temperature, which is sufficient for applications of field emission displays and vacuum nanoelectronic devices. The room-temperature photoluminescence emission with a strong peak at 369 nm indicates that the well-aligned GaN nanocolumns have potential application in light-emitting nanodevices.