Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

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• 作者：Tae-Young Kim ; Matin Amani ; Geun Ho Ahn ; Younggul Song ; Ali Javey ; Seungjun Chung ; Takhee Lee
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：February 23, 2016
• 年：2016
• 卷：10
• 期：2
• 页码：2819-2826
• 全文大小：464K
• ISSN：1936-086X

文摘

We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS₂) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS₂ film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS₂ FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.