Electrochemical Delamination and Chemical Etching of Chemical Vapor Deposition Graphene: Contrasting Properties

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• 作者：Colin Hong An Wong ; Martin Pumera
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：March 3, 2016
• 年：2016
• 卷：120
• 期：8
• 页码：4682-4690
• 全文大小：470K
• ISSN：1932-7455

文摘

Recent advancements in chemical vapor deposition techniques for the growth of graphene have enabled access to large-area and high-quality graphene film for various applications. The key step in determining the quality of the final graphene films is the transfer process to desired substrates, with the goal of minimizing the amount of structural and chemical modification to the film. Multiple methods exist for this transfer process, with each method varying in the extent to which the graphene film is altered. Four fundamentally different transfer methods, including chemical etching and electrochemical delaminating, were employed to obtain graphene films from chemical vapor deposition graphene grown on Ni foil and the resulting films characterized using scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and cyclic voltammetry. These graphene films showed noticeable differences in their material properties in terms of amount of defects and elemental purities, with a dramatic influence on the voltammetric responses of the films toward several electrochemical probes. The choice of transfer procedure thus impacts the types of electrochemical applications that such graphene films are suitable for.