Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

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• 作者：E. A. Anyebe ; A. M. Sanchez ; S. Hindmarsh ; X. Chen ; J. Shao ; M. K. Rajpalke ; T. D. Veal ; B. J. Robinson ; O. Kolosov ; F. Anderson ; R. Sundaram ; Z. M. Wang ; V. Falko ; Q. Zhuang
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：July 8, 2015
• 年：2015
• 卷：15
• 期：7
• 页码：4348-4355
• 全文大小：499K
• ISSN：1530-6992

文摘

The monolithic integration of InAs_1鈥?i>xSb_x semiconductor nanowires on graphitic substrates holds enormous promise for cost-effective, high-performance, and flexible devices in optoelectronics and high-speed electronics. However, the growth of InAs_1鈥?i>xSb_x nanowires with high aspect ratio essential for device applications is extremely challenging due to Sb-induced suppression of axial growth and enhancement in radial growth. We report the realization of high quality, vertically aligned, nontapered and ultrahigh aspect ratio InAs_1鈥?i>xSb_x nanowires with Sb composition (x_Sb(%)) up to 鈭?2% grown by indium-droplet assisted molecular beam epitaxy on graphite substrate. Low temperature photoluminescence measurements show that the InAs_1鈥?i>xSb_x nanowires exhibit bright band-to-band related emission with a distinct redshift as a function of Sb composition providing further confirmation of successful Sb incorporation in as-grown nanowires. This study reveals that the graphite substrate is a more favorable platform for InAs_1鈥?i>xSb_x nanowires that could lead to hybrid heterostructures possessing potential device applications in optoelectronics.