Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency

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• 作者：Aaron D. Franklin ; George S. Tulevski ; Shu-Jen Han ; Davood Shahrjerdi ; Qing Cao ; Hong-Yu Chen ; H.-S. Philip Wong ; Wilfried Haensch
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：February 28, 2012
• 年：2012
• 卷：6
• 期：2
• 页码：1109-1115
• 全文大小：902K
• 年卷期：v.6,no.2(February 28, 2012)
• ISSN：1936-086X

文摘

The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency鈥攈ysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain鈥搒ource bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.

Keywords:

hysteresis; carbon nanotube transistors; threshold voltage; CNTFET; variability