High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

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• 作者：Chuan Liu ; Zhihong Liu ; Henrik T. Lemke ; Hoi Nok Tsao ; Ronald C.G. Naber ; Yun Li ; Kulbinder Banger ; Klaus Mllen ; Martin M. Nielsen ; Henning Sirringhaus
• 刊名：Chemistry of Materials
• 出版年：2010
• 出版时间：March 23, 2010
• 年：2010
• 卷：22
• 期：6
• 页码：2120-2124
• 全文大小：832K
• 年卷期：v.22,no.6(March 23, 2010)
• ISSN：1520-5002

文摘

The thin film transistor characteristics of a soluble molecular semiconductor, terrylene tetracarboxdiimide (TDI), a homologue of perylene tetracarboxdiimide (PDI), have been investigated. In a bottom-gate device structure with benzocyclobutene gate dielectric, n-type behavior with electron mobility of 1.1 × 10⁻² cm² V⁻¹ s⁻¹ has been observed after thermal annealing. When applied in the top-gate structure with a polycyclohexylethylene-based gate dielectric, TDI devices exhibit ambipolar transport with electron and hole mobility of 7.2 × 10⁻³ cm² V⁻¹ s⁻¹ and 2.2 × 10⁻³ cm² V⁻¹ s⁻¹ respectively. The correlation between morphology and field-effect mobility was investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) studies. Spin-coated, annealed TDI film crystallize in a terrace structure, and the molecules are packed in an “edge-on” structure, thus forming a favorable packing arrangement for charge transport in the plane of the film.