Multiple ZnO Nanowires Field-Effect Transistors
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- 作者：Duk-Il Suh ; Seung-Yong Lee ; Jung-Hwan Hyung ; Tae-Hong Kim ; Sang-Kwon Lee
- 刊名：Journal of Physical Chemistry C
- 出版年：2008
- 出版时间：January 31, 2008
- 年：2008
- 卷：112
- 期：4
- 页码：1276 - 1281
- 全文大小：569K
- 年卷期：v.112,no.4(January 31, 2008)
- ISSN：1932-7455
文摘
We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assemblingas-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC)dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with abias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50~65nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3~11.5 
Sat a drain voltage of 1~5 V, a mobility of ~30 cm2/V·s, and a carrier concentration of 9.4 × 1017 cm-3. Fora comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithographywith a back-gate structure.
Sat a drain voltage of 1~5 V, a mobility of ~30 cm2/V·s, and a carrier concentration of 9.4 × 1017 cm-3. Fora comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithographywith a back-gate structure.