Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography
详细信息 查看全文
- 作者：Xiaogan Liang ; Yeon-Sik Jung ; Shiwei Wu ; Ariel Ismach ; Deirdre L. Olynick ; Stefano Cabrini ; Jeffrey Bokor
- 刊名：Nano Letters
- 出版年：2010
- 出版时间：July 14, 2010
- 年：2010
- 卷：10
- 期：7
- 页码：2454-2460
- 全文大小：543K
- 年卷期：v.10,no.7(July 14, 2010)
- ISSN：1530-6992
文摘
We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current−gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.