Epitaxial Growth by Chemical Solution Deposition of (110) NdNiO3−δ Films with a Sharp Metal−Insulator Transition Annealed under Ambient Oxygen
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- 作者：Xuebin Zhu ; Xianwu Tang ; Bosen Wang ; Yankun Fu ; Jianming Dai ; Wenhai Song ; Zhaorong Yang ; Xiaoguang Zhu ; Li Chen ; Yuping Sun
- 刊名：Crystal Growth & Design
- 出版年：2010
- 出版时间：November 3, 2010
- 年：2010
- 卷：10
- 期：11
- 页码：4682-4685
- 全文大小：879K
- 年卷期：v.10,no.11(November 3, 2010)
- ISSN：1528-7505
文摘
Epitaxial-stabilized (110) NdNiO3−δ films were first realized successfully by chemical solution deposition under ambient oxygen annealing. Cross-section transmission electronic microscopy observation demonstrates the interface is sharp and coherent due to epitaxial stabilization. The resistance change across the metal−insulator transition, the transition sharpness, as well as the metallic state at 300 K are about 500, 0.14 − ln Ω/K ln K, and 0.03 1/K2, respectively, which are comparable to the values for the films formed by vacuum-based methods, indicating the high-quality of the derived films. The successful achievement of (110) NdNiO3−δ films with a sharp metal−insulator transition will provides an alternative route for preparation of high-quality perovskite nickelate films using ambient oxygen annealing.