Direct Laser Writing of Air-Stable p鈥搉 Junctions in Graphene

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• 作者：Byung Hwa Seo ; Jongmin Youn ; Moonsub Shim
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：September 23, 2014
• 年：2014
• 卷：8
• 期：9
• 页码：8831-8836
• 全文大小：441K
• ISSN：1936-086X

文摘

Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to 鈭? 脳 10¹² cm^鈥?. This n-doping approach is demonstrated as an effective means of creating p鈥搉 junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p鈥搉 junctions for a variety of electronic and optoelectronic device applications.

Keywords:

CVD graphene; TIPS-pentacene; n-type doping; direct laser writing; p鈭抧 junction; photocurrent