Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons

详细信息    查看全文

• 作者：Jongwon Yoon ; Woong-Ki Hong ; Minseok Jo ; Gunho Jo ; Minhyeok Choe ; Woojin Park ; Jung Inn Sohn ; Stanko Nedic ; Hyungsang Hwang ; Mark E. Welland ; Takhee Lee
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：January 25, 2011
• 年：2011
• 卷：5
• 期：1
• 页码：558-564
• 全文大小：410K
• 年卷期：0
• ISSN：1936-086X

文摘

We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO₂ interface and the SiO₂/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO₂ layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.