Growth Enhancement and Nitrogen Loss in ZnOxNy Low-Temperature Atomic Layer Deposition with NH3

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• 作者：Soo Hyun Kim ; Jung Joon Pyeon ; Woo Chul Lee ; Doo Seok Jeong ; Seung-Hyub Baek ; Jin-Sang Kim ; Seong Keun Kim
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：October 15, 2015
• 年：2015
• 卷：119
• 期：41
• 页码：23470-23477
• 全文大小：481K
• ISSN：1932-7455

文摘

The growth behavior and properties of ZnO_xN_y (ZnON) films grown by atomic layer deposition (ALD) with diethylzinc (DEZ), H₂O, and NH₃ were investigated. Although no growth of a ZnN_x film occurs at 150 掳C from DEZ and NH₃, the ZnON film thickness is increasingly saturated by increasing ZnN_x subcycles in a supercycle up to three successive ZnN_x subcycles. The adsorbed NH₃ during the injection step of NH₃ induces the chemisorption of DEZ on the surface, consequently resulting in the growth enhancement. The optical band gap of the films decreases from 3.25 to 3.0 eV with increasing ZnN_x subcycles. The resistivity of the films is tuned in the range from 4 脳 10^鈥? to 1 脳 10² 惟路cm by the variation of the ZnN_x subcycles. However, the nitrogen concentration in the films is limited to approximately 2 at. % even at very high ZnN_x cycles. The low nitrogen concentration is attributed to the exchange reaction of NH₃ on the ZnON surface with H₂O injected during the following step. These intriguing phenomena are not observed in the ALD of Al₂O_xN_y with trimethylaluminum, which has a similar ligand structure as DEZ, H₂O, and NH₃. This finding demonstrates that the catalytic effect of NH₃ adsorbed on the ZnO surface is critical for the growth enhancement in the ALD of ZnON.