Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy

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• 作者：Chia-Pu Chu ; Shamsul Arafin ; Tianxiao Nie ; Kaiyuan Yao ; Xufeng Kou ; Liang He ; Chiu-Yen Wang ; Szu-Ying Chen ; Lih-Juann Chen ; Syed M. Qasim ; Mohammed S. BenSaleh ; Kang L. Wang
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：February 5, 2014
• 年：2014
• 卷：14
• 期：2
• 页码：593-598
• 全文大小：404K
• ISSN：1528-7505

文摘

High-quality and defect-free GaAs were successfully grown via molecular beam epitaxy on silicon dioxide patterned Si(111) substrates by a two-step growth technique. Compared with the one-step approach, the two-step growth scheme has been found to be a better pathway to obtain a superior-quality GaAs on Si. Taking advantages of low energy for both Si(111) surface and GaAs/Si(111) interface, the two-step grown GaAs of total 175 nm atop patterned Si(111) substrates exhibits atomically smooth surface morphology, single crystallininty and a remarkably low defect density. A low-temperature GaAs nucleation layer of the two-step growth helps relieve the misfit stress by accommodating the misfit dislocations at the very adjacent GaAs/Si interface. The excellent properties of the two-step grown GaAs were investigated and verified by field-emission scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Finally we demonstrated a GaAs on Si solar cell, which could represent an important milestone for future applications in light-emitting diodes, lasers, and photodetectors on Si.