Dielectric Relaxation Time of Ice-Ih with Different Preparation

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• 作者：Kaito Sasaki ; Rio Kita ; Naoki Shinyashiki ; Shin Yagihara
• 刊名：Journal of Physical Chemistry B
• 出版年：2016
• 出版时间：April 28, 2016
• 年：2016
• 卷：120
• 期：16
• 页码：3950-3953
• 全文大小：269K
• 年卷期：0
• ISSN：1520-5207

文摘

Dielectric relaxation process of ice-Ih has been investigated by many researchers. Pioneering studies focused on the temperature dependence of the dielectric relaxation time, τ_ice, were reported by Auty in 1952 [Auty, R. P.; Cole, R. H. J. Chem. Phys. 1952, 120, 1309] and Johari in 1981 [Johari, G. P.; Whalley, E. J. Chem. Phys. 1981, 75, 1333]. However, the temperature dependences of τ_ice found in these studies are not in agreement. While Auty et al. reported a single Arrhenius temperature dependence of τ_ice for the entire 207–273 K temperature range, Johari et al. reported changes in the temperature dependence of τ_ice at 230 and 140 K. In this study, the temperature dependence of τ_ice is investigated by broadband dielectric spectroscopy for ice prepared by three different procedures. For all investigated ices, a dielectric relaxation process is observed, and τ_ice decreases with increasing temperature. Temperature dependence of τ_ice with rapid crystallization shows the same properties at temperatures down to 140 K as that reported by Johari et al. On the other hand, ice obtained by slow crystallization exhibits the same temperature dependence of τ_ice as those reported by Auty et al. We suggest that the difference between the temperature dependences of τ_ice found by Auty et al. and Johari et al. can be controlled by preparation conditions. That is, the growth rate of the ice crystal can affect τ_ice because a slow growth speed of the ice crystal induces a smaller impurity content of ice, giving rise to an Arrhenius temperature dependence of τ_ice.