Large-Area Bernal-Stacked Bi-, Tri-, and Tetralayer Graphene
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- 作者：Zhengzong Sun ; Abdul-Rahman O. Raji ; Yu Zhu ; Changsheng Xiang ; Zheng Yan ; Carter Kittrell ; E. L. G. Samuel ; James M. Tour
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：November 27, 2012
- 年：2012
- 卷：6
- 期：11
- 页码：9790-9796
- 全文大小：467K
- 年卷期：v.6,no.11(November 27, 2012)
- ISSN：1936-086X
文摘
Few-layer graphene, with Bernal stacking order, is of particular interest to the graphene community because of its unique tunable electronic structure. A synthetic method to produce such large area graphene films with precise thickness from 2 to 4 layers would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform Bernal-stacked bi-, tri-, and tetralayer graphene films were successfully synthesized on a Cu surface in selective growth windows, with a finely tuned total pressure and CH4/H2 gas ratio. On the basis of the analyses obtained, the growth mechanism is not an independent homoexpitaxial layer-by-layer growth, but most likely a simultaneous-seeding and self-limiting process.