Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

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• 作者：Zhong Jin ; Jun Yao ; Carter Kittrell ; James M. Tour
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：May 24, 2011
• 年：2011
• 卷：5
• 期：5
• 页码：4112-4117
• 全文大小：878K
• 年卷期：0
• ISSN：1936-086X

文摘

In-plane heteroatom substitution of graphene is a promising strategy to modify its properties. Doping with electron-donor nitrogen heteroatoms can modulate the electronic properties of graphene to produce an n-type semiconductor. Here we demonstrate the growth of monolayer nitrogen-doped graphene in centimeter-scale sheets using a chemical vapor deposition process with pyridine as the sole source of both carbon and nitrogen. High-resolution transmission microscopy and Raman mapping characterizations indicate that the nitrogen-doped graphene sheets are uniformly monolayered. The existence of nitrogen-atom substitution in the graphene planes was confirmed by X-ray photoelectron spectroscopy. Electrical measurements show that the nitrogen-doped graphene exhibits an n-type behavior, different from pristine graphene. The preparation of large-area nitrogen-doped graphene provides a viable route to modify the properties of monolayer graphene and promote its applications in electronic devices.