Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications

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• 作者：Didier Chaussende ; Magali Ucar ; Laurent Auvray ; Francis Baillet ; Michel Pons ; and Roland Madar
• 刊名：Crystal Growth & Design
• 出版年：2005
• 出版时间：July 2005
• 年：2005
• 卷：5
• 期：4
• 页码：1539 - 1544
• 全文大小：500K
• 年卷期：v.5,no.4(July 2005)
• ISSN：1528-7505

文摘

In the classical sublimation growth of silicon carbide (SiC) single crystals, the supersaturation in thesurrounding of the seed is mainly controlled by pressure and temperature distributions within the growth cavity.Precise control of the supersaturation is difficult, especially if it needs to be adjusted during the process. In the firstpart of the paper, an experimental study performed in a continuous feed-physical vapor transport reactor (CF-PVT) is shown. This process combines CVD for the feeding of the SiC source and PVT for the growth of the singlecrystal. It is shown that the feeding gas flow rate (TMS diluted in argon) and/or the temperature allow precisecontrol of the supersaturation close to the seed, much more easily than in the classical sublimation process. In thesecond part of the paper, the application of the supersaturation control to SiC polytype engineering is demonstrated.