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Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials
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文摘
Organic Zener diodes with a precisely adjustable reverse breakdown from −3 to −15 V without any influence on the forward current−voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital−lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

Keywords:

Organic semiconductors; organic pin-diodes; molecular doping; tunneling; Zener diodes

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