We report on a hybrid diode composed of a 2.1 eV bandgap p-cupric oxide (Cu
2O) semiconductor and fullerene (C
60) layer with a face-centered cubic configuration. The hybrid diode has been constructed by electrodeposition of the 500 nm thick Cu
2O layer in a basic aqueous solution containing a copper acetate hydrate and lactic acid followed by a vacuum evaporation of the 50 nm thick C
60 layer at the evaporation rate from 0.25 to 1.0 脜/s. The C
60 layers prepared by the evaporation possessed a face-centered cubic configuration with the lattice constant of 14.19 A, and the preferred orientation changed from random to (111) plane with decrease in the C
60 evaporation rate from 1.0 to 0.25 脜/s. The hybrid p-Cu
2O/C
60 diode showed a rectification feature regardless of the C
60 evaporation rate, and both the rectification ratio and forward current density improved with decrease in the C
60 evaporation rate. The excellent rectification with the ideality factor of approximately 1 was obtained for the 500 nm thick (111)-Cu
2O/50 nm thick (111)-fcc-C
60/bathocuproine (BCP) diode at the C
60 evaporation rate of 0.25 脜 /s. The hybrid Cu
2O/C
60 diode prepared by stacking the C
60 layer at the evaporation rate of 0.25 脜/s revealed the photovoltaic performance of 8.7 脳 10
鈥?% in conversion efficiency under AM1.5 illumination, and the conversion efficiency changed depending on the C
60 evaporation rate.
Keywords:
copper oxide; fullerene; hybrid; diode; rectification; ideality factor