Inverse Metal-Assisted Chemical Etching Produces Smooth High Aspect Ratio InP Nanostructures

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• 作者：Seung Hyun Kim ; Parsian K. Mohseni ; Yi Song ; Tatsumi Ishihara ; Xiuling Li
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：641-648
• 全文大小：410K
• ISSN：1530-6992

文摘

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III鈥揤 semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H₂O₂) and sulfuric acid (H₂SO₄), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.