Intraband Luminescence from HgSe/CdS Core/Shell Quantum Dots

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• 作者：Zhiyou Deng ; Philippe Guyot-Sionnest
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：February 23, 2016
• 年：2016
• 卷：10
• 期：2
• 页码：2121-2127
• 全文大小：459K
• ISSN：1936-086X

文摘

HgSe/CdS core/shell CQD are synthesized, and the changes in the optical absorption and luminescence are investigated. While HgSe quantum dots are naturally n-doped after synthesis, both as colloidal solutions and as films, the HgSe/CdS core/shell dots in solution lose the n-doping, as seen from the optical absorption in solution. However, n-doping is regained in films, and the intraband luminescence of the films of HgSe/CdS is greater than that of the cores. The shell also vastly improves the stability of the quantum dots films against sintering at 200 °C. After annealing at that temperature, the HgSe/CdS films retain a narrow intraband emission and sustain a higher laser power leading to brighter emission at 5 μm.