Composition and Phase Tuned InGaAs Alloy Nanowires

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• 作者：Chan Su Jung ; Han Sung Kim ; Gyeong Bok Jung ; Kang Jun Gong ; Yong Jae Cho ; So Young Jang ; Chang Hyun Kim ; Chi-Woo Lee ; Jeunghee Park
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：April 28, 2011
• 年：2011
• 卷：115
• 期：16
• 页码：7843-7850
• 全文大小：1158K
• 年卷期：v.115,no.16(April 28, 2011)
• ISSN：1932-7455

文摘

In_xGa_1鈭?i>xAs (0 鈮?x 鈮?1) alloy nanowires (average diameter = 50 nm) were synthesized at 800 掳C with complete composition tuning by the thermal evaporation of GaAs/InAs powders. X-ray diffraction and Raman spectroscopy confirmed the complete composition tuning over the whole range. They exhibit exclusively a superlattice structure composed of zinc blende phase twinned octahedral slice segments having alternating orientations along the axial [111] direction and wurtzite phase twin planes. When the mole fraction (x) approaches 0.5, the period of the twinned superlattice structures becomes shorter, showing a controlled wurtzite鈭抸inc blende polytypism. At x = 0.5, the wurtzite phase is dominant with the shortest superlattice periodicity (2 nm). The smaller diameter consistently induces shorter periodic superlattice structures. This unique polytypism shows that the incorporation of In (or Ga) and the smaller diameter promotes the crystallization of the nanowires in the wurtzite phase. These In_xGa_1鈭?i>xAs nanowires produce an efficient THz emission, showing minimized carrier mobility at x = 0.5, where the superlattice stacking faults are maximized.