Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC

详细信息    查看全文

• 作者：Kanaparin Ariyawong ; Yun Ji Shin ; Jean-Marc Dedulle ; Didier Chaussende
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：June 1, 2016
• 年：2016
• 卷：16
• 期：6
• 页码：3231-3236
• 全文大小：369K
• 年卷期：0
• ISSN：1528-7505

文摘

We used numerical and analytical modeling to investigate fluid flow behaviors close to the growing 4H-SiC crystal surface in the top seeded solution growth process. First, we calculated the azimuthal and radial components of the fluid flow in front of the rotation disc. Second, we developed an analytical model describing the interaction between the step flow (of the vicinal crystal surface) and fluid flow components, considering the crystallography of 4H-SiC and introducing a phase parameter. The correlation of both models allows us to describe qualitatively the conditions for which macrosteps form and destabilize. This phenomenological description is in good agreement with the corresponding experimental observations that are also presented in this paper.