Atomic Layer Deposition of AlF3 Thin Films Using Halide Precursors

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• 作者：Miia M盲ntym盲ki ; Mikko J. Heikkil盲 ; Esa Puukilainen ; Kenichiro Mizohata ; Beno卯t Marchand ; Jyrki R盲is盲nen ; Mikko Ritala ; Markku Leskel盲
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：January 27, 2015
• 年：2015
• 卷：27
• 期：2
• 页码：604-611
• 全文大小：650K
• ISSN：1520-5002

文摘

Aluminum fluoride thin films have potential in both optic and lithium-ion battery applications. AlF₃ thin films have mostly been deposited using physical vapor deposition methods. In this study, we present a new atomic layer deposition process for AlF₃. Our method makes use of a halide鈥揾alide exchange reaction with AlCl₃ and TiF₄ as the precursors. With this new chemistry, thin films of AlF₃ can be deposited at a temperature range of 160鈥?40 掳C. The films have been studied by UV鈥搗is spectroscopy, field emission scanning electron microscopy, X-ray diffraction, X-ray reflectance, atomic force microscopy, time-of-flight elastic recoil detection analysis (ToF-ERDA), energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. At 220 掳C, the growth rate of the films is approximately 1.1 脜 per cycle, and the refractive index is 1.36 (at 580 nm). The films show only small amounts of Cl and Ti impurities when deposited at high temperatures, as determined by ToF-ERDA. Surface oxidation of the films due to moisture in ambient air is observed.