Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

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• 作者：Shin-ichi NagaokaTakuhiro Kakiuchi ; Joji Ohshita ; Osamu Takahashi ; Yasumasa Hikosaka
• 刊名：Journal of Physical Chemistry A
• 出版年：2016
• 出版时间：December 22, 2016
• 年：2016
• 卷：120
• 期：50
• 页码：9907-9915
• 全文大小：442K
• ISSN：1520-5215

文摘

Site-specific electron relaxations caused by Si:2p core-level photoionizations in F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. F₃SiCH₂CH₂Si(CH₃)₃ shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of F₃SiCH₂CH₂Si(CH₃)₃ considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in Cl₃SiCH₂CH₂Si(CH₃)₃ is considered to take place during the transient period between Si:L₂₃VV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the L₂₃VV Auger decay at the Si site bonded to the three halogen atoms.