Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

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• 作者：Michael J. Maher ; Kazunori Mori ; Stephen M. Sirard ; Andrew M. Dinhobl ; Christopher M. Bates ; Emir Gurer ; Gregory Blachut ; Austin P. Lane ; William J. Durand ; Matthew C. Carlson ; Jeffrey R. Strahan ; Christopher J. Ellison ; C. Grant Willson
• 刊名：ACS Macro Letters
• 出版年：2016
• 出版时间：March 15, 2016
• 年：2016
• 卷：5
• 期：3
• 页码：391-395
• 全文大小：343K
• ISSN：2161-1653

文摘

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition–fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO₂ via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.