Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

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• 作者：Seonyoung Park ; Seong Yeoul Kim ; Yura Choi ; Myungjun Kim ; Hyunjung Shin ; Jiyoung Kim ; Woong Choi
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：8
• 期：18
• 页码：11189-11193
• 全文大小：379K
• 年卷期：0
• ISSN：1944-8252

文摘

We report the interface properties of atomic-layer-deposited Al₂O₃ thin films on ultraviolet/ozone (UV/O₃)-treated multilayer MoS₂ crystals. The formation of S–O bonds on MoS₂ after low-power UV/O₃ treatment increased the surface energy, allowing the subsequent deposition of uniform Al₂O₃ thin films. The capacitance–voltage measurement of Au–Al₂O₃–MoS₂ metal oxide semiconductor capacitors indicated n-type MoS₂ with an electron density of ∼10¹⁷ cm^–3 and a minimum interface trap density of ∼10¹¹ cm^–2 eV^–1. These results demonstrate the possibility of forming a high-quality Al₂O₃–MoS₂ interface by proper UV/O₃ treatment, providing important implications for their integration into field-effect transistors.