Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

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• 作者：Ke-zhao Du ; Xing-zhi Wang ; Yang Liu ; Peng Hu ; M. Iqbal Bakti Utama ; Chee Kwan Gan ; Qihua Xiong ; Christian Kloc
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：February 23, 2016
• 年：2016
• 卷：10
• 期：2
• 页码：1738-1743
• 全文大小：413K
• ISSN：1936-086X

文摘

2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS₃ (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe₃ (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS₃ and 3-layer FePSe₃ show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3–3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS₃ are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.