文摘
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal鈥搊rganic vapor-phase epitaxy and experimentally determine a quantum efficiency of 鈭?0%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
Keywords:
III鈭扸 semiconductors; nanowires; wurtzite; quantum efficiency; nanowire laser; selective-area metal鈭抩rganic vapor-phase epitaxy