High-Performance Transparent Conducting Oxide Nanowires
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- 作者：Qing Wan ; Eric N. Dattoli ; Wayne Y. Fung ; Wei Guo ; Yanbin Chen ; Xiaoqing Pan ; Wei Lu
- 刊名：Nano Letters
- 出版年：2006
- 出版时间：December 2006
- 年：2006
- 卷：6
- 期：12
- 页码：2909 - 2915
- 全文大小：714K
- 年卷期：v.6,no.12(December 2006)
- ISSN：1530-6992
文摘
We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth ofvertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electricaltransport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of ~85% in thevisible range, resistivities as low as 6.29 × 10-5 
·cm and failure-current densities as high as 3.1 × 107 A/cm2. Such nanowires will be suitablein a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growthof branched nanowire structures in which semiconducting In2O3 nanowire arrays with variable densities were grown epitaxially on metallic ITOnanowire backbones.
·cm and failure-current densities as high as 3.1 × 107 A/cm2. Such nanowires will be suitablein a wide range of applications including organic light-emitting devices, solar cells, and field emitters. In addition, we demonstrate the growthof branched nanowire structures in which semiconducting In2O3 nanowire arrays with variable densities were grown epitaxially on metallic ITOnanowire backbones.