Doping Monolayer Graphene with Single Atom Substitutions

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• 作者：Hongtao Wang ; Qingxiao Wang ; Yingchun Cheng ; Kun Li ; Yingbang Yao ; Qiang Zhang ; Cezhou Dong ; Peng Wang ; Udo Schwingenschl枚gl ; Wei Yang ; X. X. Zhang
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：January 11, 2012
• 年：2012
• 卷：12
• 期：1
• 页码：141-144
• 全文大小：393K
• 年卷期：v.12,no.1(January 11, 2012)
• ISSN：1530-6992

文摘

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.

Keywords:

Graphene; vacancy; metal-vacancy complex; doping; transmission electron microscopy