“Sketch and Peel” Lithography for High-Resolution Multiscale Patterning

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• 作者：Yiqin Chen ; Quan Xiang ; Zhiqin Li ; Yasi Wang ; Yuhan Meng ; Huigao Duan
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：16
• 期：5
• 页码：3253-3259
• 全文大小：479K
• 年卷期：0
• ISSN：1530-6992

文摘

We report a unique lithographic process, termed “Sketch and Peel” lithography (SPL), for fast, clean, and reliable patterning of metallic structures from tens of nanometers to submillimeter scale using direct writing technology. The key idea of SPL process is to define structures using their presketched outlines as the templates for subsequent selective peeling of evaporated metallic layer. With reduced exposure area, SPL process enables significantly improved patterning efficiency up to hundreds of times higher and greatly mitigated proximity effect compared to current direct writing strategy. We demonstrate that multiscale hierarchical metallic structures with arbitrary shapes and minimal feature size of ∼15 nm could be defined with high fidelity using SPL process for potential nanoelectronic and nano-optical applications.