MoS2–InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

详细信息    查看全文

• 作者：Jaehyun Yang ; Hyena Kwak ; Youngbin Lee ; Yu-Seon Kang ; Mann-Ho Cho ; Jeong Ho Cho ; Yong-Hoon Kim ; Seong-Jun Jeong ; Seongjun Park ; Hoo-Jeong Lee ; Hyoungsub Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 6, 2016
• 年：2016
• 卷：8
• 期：13
• 页码：8576-8582
• 全文大小：487K
• ISSN：1944-8252

文摘

We introduce an amorphous indium–gallium–zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS₂, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS₂ and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS₂ film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS₂ film with a small band gap prepared through a large-area synthetic route. The MoS₂–IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.