Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

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• 作者：Dong Li ; Wanchao Zheng ; Dongxing Zheng ; Junlu Gong ; Liyan Wang ; Chao Jin ; Peng Li ; Haili Bai
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 17, 2016
• 年：2016
• 卷：8
• 期：6
• 页码：3977-3984
• 全文大小：549K
• ISSN：1944-8252

文摘

Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO₃(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10⁴% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO₃ layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO₃ interface.