A promising two-dimensional channel material: monolayer antimonide phosphorus

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• 作者：Bo Cai 蔡波 ; Meiqiu Xie 谢美秋 ; Shengli Zhang 张胜利 ; Chengxi Huang 黄呈熙…
• 关键词：phosphorene ; mobility ; bandgap ; density functional calculations ; alloying strategy
• 刊名：Science China Materials
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：59
• 期：8
• 页码：648-656
• 全文大小：2,900 KB
• 刊物类别：Materials Science, general; Chemistry/Food Science, general;
• 刊物主题：Materials Science, general; Chemistry/Food Science, general;
• 出版者：Science China Press
• ISSN：2199-4501
• 卷排序：59

文摘

As the base of modern electronic industry, field-effect transistor (FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional (2D) MoS₂, but the experimentally achieved maximal mobility (1000 cm2V−1 s−1) is still obviously lower than those of classical semiconductors (1,400 and 5,400 cm2V−1 s−1 for Si and InP). Here, for the first time, we report on monolayer antimonide phosphorus (SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 104 cm2 V−1 s−1 based on density functional theory calculation. In particular, α-Sb_1−xP_x monolayers possess 0.3–1.6 eV bandgaps when 0.1 ≤ x ≤ 1, which are greater than the minimum bandgap (0.4 eV) required for large on/off ratio of FET. Surprisingly, the carrier mobilities of α-Sb_1−xP_x monolayers exhibit very high upper limit approaching 2×104 cm2 V−1 s−1 when 0 ≤ x ≤ 0.25 due to the ultra-small effective mass of holes and electrons. This work reveals that 2D SbP with both suitable bandgap and high mobility could be a promising candidate as eco-friendly high-performance FET channel materials avoiding short-channel effect in the post-silicon era, especially when considering the recent experimental success in realizing arsenide phosphorus (AsP) with similar structure.